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BDT60F Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF.

General Description

·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F;

-80V(Min)- BDT60AF -100V(Min)- BDT60BF;

-120V(Min)- BDT60CF ·Complement to Type BDT61F/61AF/61BF/61CF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT60F -60 VCBO Collector-Base Voltage BDT60AF -80 V BDT60BF -100 BDT60CF -120 BDT60F -60 VCEO Collector-Emitter Voltage BDT60AF -80 V BDT60BF -100 BDT60CF -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Pulse -6 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -0.1 A 25 W 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website:www.iscsemi.com MAX UNIT 5 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT60F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT60AF BDT60BF IC= -30mA;