Download the BDT62C datasheet PDF.
This datasheet also covers the BDT62 variant, as both devices belong to the same silicon pnp darlington power transistors family and are provided as variant models within a single manufacturer datasheet.
General Description
DC Current Gain -hFE = 1000(Min)@ IC= -3A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C
Complement to Type BDT63/A/B/C
Minimum Lot-to-Lot variations for robust device
performance and reliable operat
Full PDF Text Transcription for BDT62C (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BDT62C. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Darlington Power Transistors BDT62/A/B/C DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(...
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n)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C ·Complement to Type BDT63/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT62 -60 VCBO Collector-Base Voltage BDT62A BDT62B -80 -100 BDT62C -120 BDT62 -60 VCEO Collector-Emitter Voltage BDT62A BDT62B -80 -100 BDT62C -120 VEBO Emitter-Base Voltage -5 IC Collec
BDT62C Datasheet
