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BDT65A Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor.

Download the BDT65A datasheet PDF. This datasheet also includes the BDT65 variant, as both parts are published together in a single manufacturer document.

General Description

·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT65 60 VCER Collector-Emitter Voltage BDT65A 80 BDT65B 100 V BDT65C 120 BDT65 60 VCEO Collector-Emitter Voltage BDT65A 80 BDT65B 100 V BDT65C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1 ℃/W BDT65/A/B/C isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDT65/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT65 V(BR)CEO Collector-Emitter Breakdown Voltage BDT65A BDT65B IC= 30mA ;IB=0 BDT65C VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A;

IB= 20mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A;

IB= 100mA VBE(on) Base-Emitter On Voltage IC= 5A ;