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BDV96 Datasheet Preview

BDV96 Datasheet

Silicon PNP Power Transistor

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isc Silicon PNP Power Transistor
DESCRIPTION
·Collector Current -IC= -10A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDV92; -60V(Min)- BDV94
-80V(Min)- BDV96
·Complement to Type BDV91/93/95
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in audio output stages and general
amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VCER
Collector-Emitter
Voltage
BDV92
BDV94
BDV96
-60
-80
-100
VCEO
Collector-Emitter
Voltage
BDV92
BDV94
BDV96
-60
-80
-100
VEBO
Emitter-Base Voltage
-7
IC
Collector Current-Continuous
-10
ICM
Collector Current-Peak
-20
IB
Base Current
-7
IE
Emitter Current
-14
PC
Collector Power Dissipation
@ TC=25
100
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.25 /W
BDV92/94/96
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




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BDV96 Datasheet Preview

BDV96 Datasheet

Silicon PNP Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BDV92/94/96
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDV92
-60
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDV94 IC= -30mA ;IB=0
-80
V
BDV96
-100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
-1.0 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A
-3.0 V
VBE(sat) Base -Emitter Saturation Voltage
IC= -4A; IB= -0.4A
-1.6 V
VBE(on) Base-Emitter On Voltage
IC= -4A ; VCE= -4V
-1.6 V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= VCEOmax;IB= 0
VCB= VCBOmax;IE= 0
VCB= 1/2VCBOmax;IE= 0; TJ= 150
VEB= -7V; IC=0
-0.2 mA
-0.1
-1.0
mA
-0.1 mA
hFE-1
DC Current Gain
IC= -4A ; VCE= -4V
20
hFE-2
DC Current Gain
IC= -10A ; VCE= -4V
5
fT
Current-Gain—Bandwidth Product IC= -0.5A ;VCE= -10V
4
MHz
Switching times
ton
Turn-on Time
toff
Turn-off Time
tf
Fall Time
IC= -4A; IB1= -IB2= -0.4A;
VCC= -30V
0.3
μs
0.7
μs
0.3
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademarkk


Part Number BDV96
Description Silicon PNP Power Transistor
Maker INCHANGE
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BDV96 Datasheet PDF






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