Datasheet Details
| Part number | BDW12 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.71 KB |
| Description | NPN Transistor |
| Datasheet |
 BDW12 Datasheet
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| Part number | BDW12 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 175.71 KB |
| Description | NPN Transistor |
| Datasheet |
BDW12 Datasheet
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·With TO-3 Package ·High Current Capability ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range 120 V 120 V 6 V 15 A 180 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.83 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BDW12 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC=5A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor BDW12.
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|---|---|
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| BDW21 | NPN Transistor |
| BDW22 | PNP Transistor |
| BDW23 | NPN Transistor |
| BDW23A | NPN Transistor |
| BDW23B | NPN Transistor |
| BDW23C | NPN Transistor |
| BDW24 | PNP Transistor |
| BDW24A | PNP Transistor |
| BDW24B | PNP Transistor |