Datasheet Details
| Part number | BDW30 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.62 KB |
| Description | NPN Transistor |
| Datasheet |
 BDW30 Datasheet
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| Part number | BDW30 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.62 KB |
| Description | NPN Transistor |
| Datasheet |
BDW30 Datasheet
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·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 10A ·High Switching Speed ·High DC Current Gain- : hFE= 20(Min.) @IC= 25A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous 100 V 6 V 30 A ICM Collector Current-Peak PC Collector Power Dissipation TJ Junction Temperature 40 A 250 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ HERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor BDW30 CONDITIONS MIN TYP.
MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC=10A;
IB= 1A 0.6 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor BDW30.
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