BDW34
BDW34 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Low Collector Saturation Voltage-
: VCE(sat)= 0.6V(Max.) @IC= 10A
- High Switching Speed
- High DC Current Gain-
: h FE= 20(Min.) @IC= 25A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high current, high speed, high power applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO VEBO
Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃
HERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS...
