Datasheet Details
| Part number | BDW53 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.28 KB |
| Description | NPN Transistor |
| Download | BDW53 Download (PDF) |
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| Part number | BDW53 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.28 KB |
| Description | NPN Transistor |
| Download | BDW53 Download (PDF) |
|
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|
·High DC Current Gain : hFE= 750(Min.)@ IC= 1.5A, VCE= 3V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min) ·Low Collector Saturation Voltage ·Complement to Type BDW54 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IB PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current- Continuous Collector Power Dissipation @TC=25℃ Collector Power Dissipation @Ta=25℃ Junction Temperature Storage Temperature Range 45 V 45 V 5 V 4 A 50 mA 40 W 2 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.125 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS INCHANGE Semiconductor BDW53 MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 45 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A ,IB= 30mA 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A ,IB= 40mA 4.0 V VBE(on) Base-Emitter On Voltage IC= 1.5A ;
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDW53.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BDW53 | NPN Transistor | Power Innovations Limited |
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BDW53A | NPN Transistor | Power Innovations Limited |
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BDW53B | NPN Transistor | Power Innovations Limited |
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BDW53C | NPN Transistor | Power Innovations Limited |
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BDW53D | NPN Transistor | Power Innovations Limited |
| Part Number | Description |
|---|---|
| BDW51 | NPN Transistor |
| BDW51A | NPN Transistor |
| BDW51B | NPN Transistor |
| BDW51C | NPN Transistor |
| BDW52 | Silicon PNP Power Transistor |
| BDW52A | Silicon PNP Power Transistor |
| BDW52B | Silicon PNP Power Transistor |
| BDW52C | Silicon PNP Power Transistor |
| BDW54 | PNP Transistor |
| BDW55 | NPN Transistor |