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BDW54 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

General Description

·High DC Current Gain : hFE= 750(Min.)@ IC= -1.5A, VCE= -3V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min) ·Low Collector Saturation Voltage ·Complement to Type BDW53 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -45 VCEO Collector-Emitter Voltage -45 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -4 IB Base Current-DC -50 PC Collector Power Dissipation TC=25℃ 40 Tj Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.125 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDW54 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA, IB= 0 -45 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A ,IB= -30mA -2.5 V VCE(sat)-2 Collector-Emitter Saturation voltage IC= -4A ,IB= -40mA -4.0 V VBE(on) Base-Emitter On Voltage IC= -1.5A ;

Overview

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor.