Datasheet4U Logo Datasheet4U.com

BDW83D - NPN Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – BDW83D

Datasheet Details

Part number BDW83D
Manufacturer INCHANGE
File Size 216.40 KB
Description NPN Transistor
Datasheet download datasheet BDW83D Datasheet
Additional preview pages of the BDW83D datasheet.

Product details

Description

Collector Current -IC= 15A High DC Current Gain-hFE= 750(Min)@ IC= 6A Complement to Type BDW84D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Co

📁 Similar Datasheet

  • BDW83 - SILICON POWER TRANSISTOR (SavantIC)
  • BDW83A - SILICON POWER TRANSISTOR (SavantIC)
  • BDW83B - SILICON POWER TRANSISTOR (SavantIC)
  • BDW84 - PNP SILICON POWER DARLINGTONS (Bourns Electronic Solutions)
  • BDW84A - PNP SILICON POWER DARLINGTONS (Bourns Electronic Solutions)
  • BDW84B - PNP SILICON POWER DARLINGTONS (Bourns Electronic Solutions)
  • BDW84D - Bipolar PNP Device (Seme LAB)
  • BDW21 - Bipolar NPN Device (Seme LAB)
Other Datasheets by INCHANGE
Published: |