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BDW84A Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Darlington Power Transistor BDW84/A/B/C.

Download the BDW84A datasheet PDF. This datasheet also includes the BDW84 variant, as both parts are published together in a single manufacturer document.

General Description

·Collector Current -IC= -15A ·High DC Current Gain-hFE= 750(Min)@ IC= -6A ·Complement to Type BDW83/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW84 -45 VCER Collector-Emitter Voltage BDW84A -60 BDW84B -80 V BDW84C -100 BDW84 -45 VCEO Collector-Emitter Voltage BDW84A -60 BDW84B -80 V BDW84C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 3.5 W 150 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.83 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDW84/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT BDW84 -45 V(BR)CEO Collector-Emitter Breakdown Voltage BDW84A BDW84B IC= -30mA ;IB=0 -60 -80 V BDW84C -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A;

IB= -12mA -2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A;