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BDW93C Datasheet Preview

BDW93C Datasheet

NPN Transistor

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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
BDW93C
DESCRIPTION
·With TO-220 packaging
·Very high DC current gain
·Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
·Complement to Type BDW94C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·AC-DC motor control
·Electronic ignition
·Alternator regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
Collector Power Dissipation
Max.Junction Temperature
100
V
100
V
5
V
12
A
15
A
0.2
A
80
W
150
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.56 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BDW93C Datasheet Preview

BDW93C Datasheet

NPN Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
BDW93C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0
VCE(sat)1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 20mA
VCE(sat)2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 100mA
VBE(sat)1 Base-Emitter Saturation Voltage
IC= 5A ,IB= 20mA
VBE(sat)2 Base-Emitter Saturation Voltage
IC= 10A ,IB= 100mA
ICBO
Collector Cutoff Current
VCB=100V, IE= 0
ICEO
Collector Cutoff Current
VCE= 100V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 3A ; VCE= 3V
hFE-2
DC Current Gain
IC= 5A ; VCE= 3V
hFE-3
DC Current Gain
IC= 10A ; VCE= 3V
MIN
100
1000
750
100
MAX
2.0
3.0
2.5
4.0
100
1
2
20000
20000
20000
UNIT
V
V
V
V
V
μA
mA
mA
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BDW93C
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BDW93C Datasheet PDF





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