Datasheet Details
| Part number | BDX11 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.41 KB |
| Description | NPN Transistor |
| Datasheet |
 BDX11 Datasheet
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| Part number | BDX11 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.41 KB |
| Description | NPN Transistor |
| Datasheet |
BDX11 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) ·High Current Capability ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 160 V 140 V 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Range 15 A 117 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC=5A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX11.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BDX11 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| BDX12 | NPN Transistor |
| BDX13 | NPN Transistor |
| BDX14 | PNP Transistor |
| BDX16 | PNP Transistor |
| BDX18 | PNP Transistor |
| BDX24 | NPN Transistor |
| BDX33 | NPN Transistor |
| BDX33A | NPN Transistor |
| BDX33B | NPN Transistor |
| BDX33C | NPN Transistor |