Datasheet Details
| Part number | BDX12 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.64 KB |
| Description | NPN Transistor |
| Datasheet |
 BDX12 Datasheet
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| Part number | BDX12 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.64 KB |
| Description | NPN Transistor |
| Datasheet |
BDX12 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for application in industrial and commercial equipment including high fidelity audio amplifier,series and shunt regulators and power switches ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO VEBO IC PC TJ Tstg Collector-Emitter Voltage 120 V Emitter-Base Voltage 7 V Collector Current-Continuous 5 A Collector Power Dissipation@TC=25℃ 100 W Junction Temperature 150 ℃ Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.75 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX12 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=50mA;
IB= 0 120 V ICBO Collector Cutoff Current VCB=140V ;
isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX12.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDX12 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| BDX11 | NPN Transistor |
| BDX13 | NPN Transistor |
| BDX14 | PNP Transistor |
| BDX16 | PNP Transistor |
| BDX18 | PNP Transistor |
| BDX24 | NPN Transistor |
| BDX33 | NPN Transistor |
| BDX33A | NPN Transistor |
| BDX33B | NPN Transistor |
| BDX33C | NPN Transistor |