Datasheet Details
| Part number | BDX13 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.93 KB |
| Description | NPN Transistor |
| Download | BDX13 Download (PDF) |
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| Part number | BDX13 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.93 KB |
| Description | NPN Transistor |
| Download | BDX13 Download (PDF) |
|
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·Excellent Safe Operating Area ·DC Current Gain-hFE=15-60@IC = 8A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 4A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 117 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.52 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor BDX13 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;
IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;
isc Silicon NPN Power Transistor INCHANGE Semiconductor BDX13.
| Part Number | Description |
|---|---|
| BDX11 | NPN Transistor |
| BDX12 | NPN Transistor |
| BDX14 | PNP Transistor |
| BDX16 | PNP Transistor |
| BDX18 | PNP Transistor |
| BDX24 | NPN Transistor |
| BDX33 | NPN Transistor |
| BDX33A | NPN Transistor |
| BDX33B | NPN Transistor |
| BDX33C | NPN Transistor |