900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

BDX35 Datasheet Preview

BDX35 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BDX35
DESCRIPTION
··High Current Capability-IC= 5A(DC)
·DC Current Gain
: hFE = 45-450(Min) @ IC= 0.5 A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High-current switching in power applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
Ta=25
Collector Power Dissipation
TC75
Ti
Junction Temperature
2
A
1.25
W
15
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
5 /W
Rth j-a Thermal Resistance,Junction to Ambient 100 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BDX35 Datasheet Preview

BDX35 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BDX35
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
60
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5 A ;IB= 0.5A
0.9
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A ;IB= 0.7A
1.2
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 5 A ;IB= 0.5A
1.7
V
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 7A ;IB= 0.7A
VCB= 80V; IE= 0
VCB= 80V; IE= 0; TC= 100
VEB= 5V; IC= 0
2.0
V
0.1
10
μA
0.1 μA
hFE
DC Current Gain
IC= 0.5A ; VCE= 10V
45
450
fT
Current-Gain—Bandwidth Product
IC= 0.5 A; VCE= 5V; f= 100MHz
100
MHz
COB
Collector Capacitance
IE= 0; VCB= 10V; ftest = 1MHz
40
pF
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 1A; IB1= -IB2= 0.1A
100 ns
800 ns
ton
Turn-On Time
toff
Turn-Off Time
IC= 2A; IB1= -IB2= 0.2A
80
ns
700 ns
ton
Turn-On Time
toff
Turn-Off Time
IC= 5A; IB1= -IB2= 0.5A
300 ns
500 ns
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BDX35
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
PDF Download

BDX35 Datasheet PDF





Similar Datasheet

1 BDX30 PNP SILICON PLANAR TRANSISTORS
Siemens Semiconductor Group
2 BDX33 POWER TRANSISTORS(10A/70W)
Mospec Semiconductor
3 BDX33 NPN SILICON POWER DARLINGTONS
Power Innovations Limited
4 BDX33 Power Linear and Switching Applications
Fairchild Semiconductor
5 BDX33 NPN/PNP PLASTIC POWER TRANSISTORS
CDIL
6 BDX33 NPN Silicon Power Darlingtons
MCC
7 BDX33 NPN SILICON POWER DARLINGTONS
Bourns Electronic Solutions
8 BDX33 NPN Silicon Power Darlingtons
Micro Commercial Components
9 BDX33 Silicon NPN Power Transistors
Savantic





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy