| Part number | BDX35 |
|---|---|
| Datasheet | BDX35-INCHANGE.pdf |
| File Size | 207.62 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
··High Current Capability-IC= 5A(DC) ·DC Current Gain : hFE = 45-450(Min) @ IC= 0.5 A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High-current switching in power applications.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BDX35 | NPN switching transistors | NXP |
 |
BDX35 | SILICON POWER TRANSISTOR | SavantIC |
 |
BDX35 | SILICON PLANAR EPITAXIAL POWER TRANSISTOR | Comset Semiconductors |
