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BDX87C Datasheet Preview

BDX87C Datasheet

NPN Transistor

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isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BDX87C
DESCRIPTION
·High DC Current Gain-
: hFE= 750(Min)@ IC= 6A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Complement to Type BDX88C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
100
UNIT
V
VCEO
VEBO
IC
ICM
IB
PC
TJ
Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@ TC=25
Junction Temperature
Storage Temperature Range
100
V
5
V
12
A
18
A
200
mA
120
W
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.45 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BDX87C Datasheet Preview

BDX87C Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BDX87C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
100
VCE(sat)-1Collector-Emitter Saturation Voltage IC= 6A; IB= 24mA
VCE(sat)-2Collector-Emitter Saturation Voltage IC= 12A; IB= 120mA
VBE(sat)Base-Emitter Saturation Voltage
IC= 12A; IB= 120mA
VBE(on)Base-Emitter On Voltage
IC= 6A; VCE= 3V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
VCB= 100V; IE= 0; TC= 150
ICEO
Collector Cutoff Current
VCE= 50V; IB= 0
V
2.0
V
3.0
V
4.0
V
2.8
V
0.5
5.0
mA
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 5A; VCE= 3V
hFE-2
DC Current Gain
IC= 6A; VCE= 3V
hFE-3
DC Current Gain
IC= 12A; VCE= 3V
Pulsed: Pulse duration = 300 us, duty cycle = 1.5 %
1000
750
100
2.0
mA
18000
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BDX87C
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BDX87C Datasheet PDF





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