| Part number | BDY29 |
|---|---|
| Datasheet | BDY29-INCHANGE.pdf |
| File Size | 199.54 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 75V (Min) ·Low Collector-Emitter Saturation Voltage ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power ,high current and switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| ETC | BDY29 | HIGH POWER HIGH CURRENT TRANSISTOR | ETC |
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