900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

BDY29 Datasheet Preview

BDY29 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 75V (Min)
·Low Collector-Emitter Saturation Voltage
·Excellent Safe Operating Area
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high power ,high current and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
75
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
30
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
7.5
A
220
W
200
Tstg
Storage Temperature Range
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.8 /W
BDY29
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BDY29 Datasheet Preview

BDY29 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
VBE(on) Base-Emitter On Voltage
ICEX
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 30A ; VCE= 4V
VCE= 100V; VBE= -1.5V
VCE= 100V; VBE= -1.5V;TC=150
VCE= 75V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 15A ; VCE= 2V
Is/b
Second Breakdown Collector
Current with Base Forward Biased
VCE= 60V,t= 1.0s,Nonrepetitive
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 4V
BDY29
MIN MAX UNIT
75
V
1.2
V
3.5
V
1.0
10
mA
2.0
mA
1.0
mA
15
60
3.66
A
4
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BDY29
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

BDY29 Datasheet PDF





Similar Datasheet

1 BDY20 Bipolar NPN Device
Seme LAB
2 BDY20 Silicon NPN Power Transistor
Inchange Semiconductor
3 BDY23 (BDY23 - BDY25)NPN SILICON TRANSISTORS
Comset Semiconductor
4 BDY23 Bipolar NPN Device
Seme LAB
5 BDY23 Silicon NPN Power Transistor
Inchange Semiconductor
6 BDY23 Trans GP BJT NPN 60V 6A 3-Pin(2+Tab) TO-3
New Jersey Semiconductor
7 BDY23A Bipolar NPN Device
Seme LAB
8 BDY23A Trans GP BJT NPN 60V 6A 3-Pin(2+Tab) TO-3
New Jersey Semiconductor
9 BDY23B Bipolar NPN Device
Seme LAB





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy