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BFQ540 - NPN Transistor

General Description

High Gain High Output Voltage Low Noise Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in VHF, UHF and CATV amplifiers.

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isc Silicon NPN RF Transistor DESCRIPTION ·High Gain ·High Output Voltage ·Low Noise ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF, UHF and CATV amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCES Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 120 mA 1.2 W 175 ℃ Tstg Storage Temperature Range -65~150 ℃ BFQ540 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor BFQ540 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.