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BFR106 Datasheet Preview

BFR106 Datasheet

NPN Transistor

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isc Silicon NPN RF Transistor
DESCRIPTION
·Low Noise Figure
NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz
·High Gain
S21e2 = 10.5 dB TYP. @VCE= 8 V,IC = 70 mA,f = 900 MHz
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in low noise ,high-gain amplifiers and
linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCES Collector-Emitter Voltage
20
V
20
V
VCEO Collector-Emitter Voltage
15
V
VEBO Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
100
mA
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
12
mA
0.5
W
175
Tstg
Storage Temperature Range
-65~150
BFR106
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BFR106 Datasheet Preview

BFR106 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN RF Transistor
BFR106
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
15
V
ICES
Collector Cutoff Current
VCE= 20V; VBE= 0
100 μA
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.1 μA
IEBO
Emitter Cutoff Current
VEB= 2V; IC= 0
10 μA
hFE
DC Current Gain
IC= 70mA ; VCE= 8V
40
220
fT
Current-Gain—Bandwidth Product
IC= 70mA ; VCE= 8V; f= 500MHz 3.5
5
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
0.95 1.5 pF
PG
Power Gain
IC= 70mA ; VCE= 8V; f= 900MHz
12.5
dB
PG
Power Gain
IC= 70mA ; VCE= 8V; f= 1.8GHz
7.5
dB
S21e2 Insertion Power Gain
IC= 70mA ; VCE= 8V; f= 900MHz
10.5
dB
S21e2 Insertion Power Gain
IC= 70mA ; VCE= 8V; f= 1.8GHz
5
dB
NF
Noise Figure
IC= 20mA ; VCE= 8V; f= 900MHz
2.5
dB
NF
Noise Figure
IC= 20mA ; VCE= 8V; f= 1.8GHz
4
dB
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BFR106
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
PDF Download

BFR106 Datasheet PDF





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