Datasheet Details
| Part number | BFR182TW |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.81 KB |
| Description | NPN Transistor |
| Datasheet | BFR182TW-INCHANGE.pdf |
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Overview: isc Silicon NPN RF Transistor.
| Part number | BFR182TW |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.81 KB |
| Description | NPN Transistor |
| Datasheet | BFR182TW-INCHANGE.pdf |
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·Low Voltage Use ·Ultra Super Mini Mold Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Max.Junction Temperature 35 mA 200 mW 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BFR182TW isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor BFR182TW ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified, Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 % SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT ICBO Collector Cutoff Current VCB= 10V;
IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 1V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BFR182TW | Silicon NPN Planar RF Transistor | Vishay Telefunken |
|
BFR182T | Silicon NPN Planar RF Transistor | Vishay Telefunken |
 |
BFR182T | NPN Silicon RF Transistor | Infineon Technologies AG |
 |
BFR182 | NPN Silicon RF Transistor | Siemens Semiconductor Group |
|
BFR182 | Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
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