Datasheet Details
| Part number | BLD137DL |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.70 KB |
| Description | NPN Transistor |
| Datasheet | BLD137DL-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors INCHANGE Semiconductor BLD137DL.
| Part number | BLD137DL |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.70 KB |
| Description | NPN Transistor |
| Datasheet | BLD137DL-INCHANGE.pdf |
|
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·With TO-220 packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 400 VCEO Collector-Emitter Voltage 200 VEBO Emitter-Base Voltage 9 IC Collector Current-Continuous 12 PT Total Power Dissipation 80 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.63 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors INCHANGE Semiconductor BLD137DL ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 VCBO Collector-Base Voltage IC= 1mA;
IE= 0 VEBO Emitter-Base Voltage IE= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BLD137D | BLD SERIES TRANSISTORS | Shenzhen SI Semiconductors |
| Part Number | Description |
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