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BLD137DL Datasheet Preview

BLD137DL Datasheet

NPN Transistor

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isc Silicon NPN Power Transistors
INCHANGE Semiconductor
BLD137DL
DESCRIPTION
·With TO-220 packaging
·Reliable performance at higher powers
·Accurate reproduction of Input signal
·Greater dynamic range
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
400
VCEO
Collector-Emitter Voltage
200
VEBO
Emitter-Base Voltage
9
IC
Collector Current-Continuous
12
PT
Total Power Dissipation
80
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 0.63 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BLD137DL Datasheet Preview

BLD137DL Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistors
INCHANGE Semiconductor
BLD137DL
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCBO
Collector-Base Voltage
IC= 1mA; IE= 0
VEBO
Emitter-Base Voltage
IE= 1mA; IC= 0
VCE(sat)1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VCE(sat)2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A;VCE= 2V
ICBO
Collector Cutoff Current
VCB= 400V
ICEO
Collector Cutoff Current
VCE= 200V; IB= 0
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
hFE-3
DC Current Gain
IC= 12A; VCE= 5V
MIN TYP. MAX UNIT
200
V
400
V
9
V
0.5
V
1.5
V
1.5
V
100 μA
250 μA
7
10
40
5
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BLD137DL
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BLD137DL Datasheet PDF





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