BLD137DL
BLD137DL is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- With TO-220 packaging
- Reliable performance at higher powers
- Accurate reproduction of Input signal
- Greater dynamic range
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching regulators
- High frequency inverters
- General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Total Power Dissipation
Junction Temperature
Tstg
Storage Temperature Range
-65~150
UNIT V V V A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 0.63 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power...
