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BT136S-600E Datasheet

Manufacturer: Inchange Semiconductor
BT136S-600E datasheet preview

Datasheet Details

Part number BT136S-600E
Datasheet BT136S-600E-INCHANGE.pdf
File Size 155.58 KB
Manufacturer Inchange Semiconductor
Description Thyristor
BT136S-600E page 2

BT136S-600E Overview

isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BT136S-600E (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated; Tj=125℃ VTM On-state voltage IT=5A IGT Gate-trigger current Ⅰ Ⅱ VD =12V;IT=0.1A; Ⅲ Ⅳ VGT Gate-trigger voltage VD =12V;IT=0.1A;.

BT136S-600E from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
NXP Logo BT136S-600E Triacs NXP
WeEn Logo BT136S-600E 4Q Triac WeEn
NXP Logo BT136S-600 4Q Triac NXP
WeEn Logo BT136S-600 4Q Triac WeEn
NXP Logo BT136S-600D 4Q Triac NXP
Inchange Semiconductor logo - Manufacturer

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