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BT137S-800F Datasheet Thyristor

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors BT137S-800F.

General Description

·With TO-252( DPAK ) packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) ITSM PG(AV) Average on-state current Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX 800 800 8 65 71 0.5 125 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;

VD=VDRM Rated;

Tj=125℃ VTM On-state voltage IT=10A IGT Gate-trigger current Ⅰ Ⅱ VD =12V;IT=0.1A;

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