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isc Thyristors
INCHANGE Semiconductor
BTB08-600B
DESCRIPTION ·With TO-220 packaging ·Can be operated in 4 quadrants ·Advanced technology to provide customers with high
commutation performances ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(AV) Average on-state current
Tc=75℃
ITSM Surge non-repetitive on-state current
50HZ 60HZ
PG(AV) Average gate power dissipation ( over any 20 ms period )
Tj
Operating junction temperature
Tstg Storage temperature
MAX
UNIT
600
V
600
V
8
A
80 84
A
1
W
-40~125 ℃ -40~150 ℃
isc website:www.iscsemi.