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BU102 - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A With TO-3 Package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design

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Datasheet Details

Part number BU102
Manufacturer Inchange Semiconductor
File Size 199.05 KB
Description NPN Transistor
Datasheet download datasheet BU102 Datasheet
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isc Silicon NPN Power Transistor UIDESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A ·With TO-3 Package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage of CTV receivers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ BU102 isc website：www.iscsemi.
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