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BU102 Datasheet Preview

BU102 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
UIDESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 150V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max.)@ IC= 5A
·With TO-3 Package
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for horizontal deflection output stage of CTV
receivers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
7
A
100
W
150
Tstg
Storage Temperature Range
-55~150
BU102
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BU102 Datasheet Preview

BU102 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
ICEO
Collector Cutoff Current
VCE= 150V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
BU102
MIN TYP. MAX UNIT
150
V
400
V
6
V
2.0
V
2.5
V
100 μA
500 μA
100 μA
30
120
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU102
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BU102 Datasheet PDF





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