Datasheet Details
| Part number | BU102 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.05 KB |
| Description | NPN Transistor |
| Download | BU102 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor UI.
| Part number | BU102 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.05 KB |
| Description | NPN Transistor |
| Download | BU102 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A ·With TO-3 Package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage of CTV receivers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ BU102 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU102 | Silicon NPN Power Transistors | Savantic |
 |
BU102S | NPN power transistor | Jingdao |
| PENGAI | BU102S | NPN Transistor | PENGAI |
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