Datasheet Details
| Part number | BU123 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.23 KB |
| Description | NPN Transistor |
| Datasheet |
 BU123 Datasheet
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| Part number | BU123 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.23 KB |
| Description | NPN Transistor |
| Datasheet |
BU123 Datasheet
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·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120 V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage of TVs and CRTs applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous 120 V 8 V 5 A ICM Collector Current-Peak 8 A IB Base Current 2 A PC Collector Power Dissipation@TC=25℃ 67 W TJ Junction Temperature Tstg Storage Temperature 150 ℃ -65~150 ℃ BU123 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A;
isc Silicon NPN Power Transistor.
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|---|---|
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