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BU123 Datasheet Preview

BU123 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC = 5A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 120 V(Min)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for horizontal deflection output stage of TVs and
CRTs applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
120
V
8
V
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current
2
A
PC
Collector Power Dissipation@TC=25
67
W
TJ
Junction Temperature
Tstg
Storage Temperature
150
-65~150
BU123
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BU123 Datasheet Preview

BU123 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICBO
Collector Base Cutoff Current
VCB=180V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
fT
Current Gain-Bandwidth Product
IC= 0.5A ; VCE= 10V
BU123
MIN MAX UNIT
120
V
1.0
V
1.2
V
1.0 mA
1.0 mA
25 250
5
10
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU123
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BU123 Datasheet PDF





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