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BU210 - NPN Transistor

Description

High Collector-Base Breakdown Voltage- : V(BR)CBO= 400V (Min) High Current Capability High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal output and high po

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 400V (Min) ·High Current Capability ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 A 85 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU210 isc website：www.iscsemi.
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