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INCHANGE

BU212 Datasheet Preview

BU212 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 750V (Min)
·High Current Capability
·High Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for TV horizontal output and high power switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
750
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
15
A
85
W
150
Tstg
Storage Temperature Range
-65~150
BU212
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BU212 Datasheet Preview

BU212 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BU212
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
350
V
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
750
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
8
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 2.5A
2.2
V
ICBO
Collector Cutoff Current
VCB= 750V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
0.1 mA
hFE
DC Current Gain
IC= 8A; VCE= 5V
5
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
6
MHz
tf
Fall Time
IC= 8A; IB1= -IB2= 2.5A
1.0 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU212
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BU212 Datasheet PDF





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