BU212 Overview
·High Collector-Base Breakdown Voltage- : V(BR)CBO= 750V (Min) ·High Current Capability ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal output and high power switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU212 TC=25℃ unless otherwise specified...