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BU222 Datasheet Preview

BU222 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 450V (Min)
·High Current Capability
·High Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching regulators
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
450
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
2
A
75
W
150
Tstg
Storage Temperature Range
-65~150
BU222
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BU222 Datasheet Preview

BU222 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BU222
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
ICBO
Collector Cutoff Current
VCB= 450V; IE=0
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
fT
Current-Gain—Bandwidth Product
VEB= 7V; IC=0
IC= 3A; VCE= 4V
IC= 6A; VCE= 4V
IC= 0.5A;VCE= 10V;ftest= 1MHz
MIN TYP. MAX UNIT
350
V
450
V
7
V
1.5
V
1.2
V
0.1 mA
0.1 mA
10
3
10
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU222
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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