Datasheet Details
| Part number | BU2520AF |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.30 KB |
| Description | NPN Transistor |
| Datasheet |
 BU2520AF Datasheet
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| Part number | BU2520AF |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.30 KB |
| Description | NPN Transistor |
| Datasheet |
BU2520AF Datasheet
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of large screen color TV receivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 10 A ICM Collector Current-Peak 25 A IB Base Current- Continuous 6 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 9 A 45 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ INCHANGE Semiconductor BU2520AF SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademarkk isc Silicon NPN Power Transistor INCHANGE Semiconductor BU2520AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;
IB= 0 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
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