Datasheet4U Logo Datasheet4U.com

BU2525A Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of large screen colour television receivers up to 32 KHz.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCESM VCEO Collector- Emitter Voltage Peak value Collector-Emitter Voltage 1500 800 VEBO Emitter-Base Voltage 7.5 UNIT V V V IC Collector Current- Continuous 12 A ICM Collector Current-Peak IB Base Current- Continuous IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 8 A 12 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU2525A THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.0 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU2525A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;

Overview

isc Silicon NPN Power Transistor.