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BU2527DX Datasheet Preview

BU2527DX Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BU2527DX
DESCRIPTION
·High Switching Speed
·High Voltage
·Built-in Ddamper Ddiode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in horizontal deflection circuits of high
resolution monitors.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7.5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-peak
30
A
IB
Base Current-Continuous
8
A
IBM
Base Current-peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
12
A
45
W
150
Tstg
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.8 K/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BU2527DX Datasheet Preview

BU2527DX Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BU2527DX
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 8A; IB= 1.6A
VCE= BVCES; VBE= 0
VCE= BVCES; VBE= 0;TC=125
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 8A
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1MHz
MIN TYP. MAX UNIT
800
V
7.5
V
5.0
V
1.1
V
1.0
2.0
mA
110
mA
11
5
7
10
2.0
V
145
pF
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU2527DX
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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