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BU304F Datasheet Preview

BU304F Datasheet

NPN Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU304F/305F
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)- BU304F
400V(Min)- BU305F
·Collector Current-4A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in switching regulators, inverters, motor
controls, solenoid/relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BU304F
600
VCBO
Collector-Base Voltage
V
BU305F
700
BU304F
300
VCEO
Collector-Emitter Voltage
V
BU305F
400
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
16
A
IB
Base Current
4
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
8
A
18
W
150
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
isc websitewww.iscsemi.com
6.12 /W
1 isc & iscsemi is registered trademark




INCHANGE

BU304F Datasheet Preview

BU304F Datasheet

NPN Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU306F/307F
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BU304F
BU305F
IC= 50mA ;IB= 0
300
V
400
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
1.0 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
1.5 V
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 8A; IB= 2A
3.0 V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
1.2 V
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
1.6 V
IEBO
Emitter Cutoff Current
VEB= 9V; IC=0
1
mA
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 5V
15
50
hFE-2
DC Current Gain
IC= 2A ; VCE= 5V
8
40
hFE-3
DC Current Gain
IC= 5A ; VCE= 5V
6
30
COB
Output Capacitance
IE= 0 ; VCB= 10V
80
pF
fT
Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V, ftest= 1.0MHz
4
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU304F
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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