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INCHANGE

BU323Z Datasheet Preview

BU323Z Datasheet

NPN Transistor

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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
BU323Z
DESCRIPTION
·With TO-220 packaging
·Very high DC current gain
·Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·AC-DC motor control
·Electronic ignition
·Alternator regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current- Continuous
3
A
PC
Collector Power Dissipation
150
W
Tj
Junction Temperature
175
Tstg
Storage Temperature Range
-65~175
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BU323Z Datasheet Preview

BU323Z Datasheet

NPN Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
BU323Z
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to
Ambient
MAX
1.0
62.5
UNIT
/W
/W
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=7A, IB= 0
VCE(sat)1 Collector-Emitter Saturation Voltage IC= 7A ,IB= 70mA
VCE(sat)2 Collector-Emitter Saturation Voltage IC= 8A ,IB= 0.1A
VCE(sat)3 Collector-Emitter Saturation Voltage IC= 10A ,IB= 0.25A
VBE(sat)1 Base-Emitter Saturation Voltage
IC= 8A ,IB= 100mA
VBE(sat)2 Base-Emitter Saturation Voltage
IC= 10A ,IB= 0.25A
VBE(on)1 Base-Emitter On Voltage
IC= 5A ; VCE= 2V
VBE(on)2 Base-Emitter On Voltage
IC= 8A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB=-350V, IE= 0
ICEO
Collector Cutoff Current
VCE=200V, IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 6.5A ; VCE= 1.5V
hFE-2
DC Current Gain
IC= 5.0A ; VCE=4.6V
MIN
MAX UNIT
350
V
1.6
V
1.8
V
1.7
V
2.2
V
2.5
V
2.1
V
2.3
V
100
μA
100
μA
50
mA
150
500
3400
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU323Z
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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BU323Z Datasheet PDF





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