With TO-220 packaging
Very high DC current gain
Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
AC-DC motor control
Electronic ignition
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
BU323Z
DESCRIPTION ·With TO-220 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated
antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current- Continuous
3
A
PC
Collector Power Dissipation
150
W
Tj
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~175
℃
BU323Z Datasheet
