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BU426AF Datasheet Preview

BU426AF Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
BU426AF
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switch-mode CTV supply systems applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCES
Collector-Emitter Voltage VBE= 0
900
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
2
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
3
A
70
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.1 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BU426AF Datasheet Preview

BU426AF Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BU426AF
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0
400
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A
3.0
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.5A
1.4
V
VBE(sat)-2 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4A; IB= 1.25A
VCE= 900V; VBE= 0
VCE= 900V; VBE= 0;TJ=125
VEB= 10V; IC=0
1.6
V
1.0
2.0
mA
1.0 mA
hFE
DC Current Gain
IC= 0.6A ; VCE= 5V
15
60
Switching Times
ton
Turn-On Time
0.6 μs
tstg
Storage Time
IC= 2.5A; IB1= 0.5A; IB2= -1A;
VCC= 250V
3.5 μs
tf
Fall Time
0.15
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU426AF
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BU426AF Datasheet PDF





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