Datasheet Details
| Part number | BU426AF |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.25 KB |
| Description | NPN Transistor |
| Download | BU426AF Download (PDF) |
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Overview: isc Silicon NPN Power Transistor BU426AF.
| Part number | BU426AF |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.25 KB |
| Description | NPN Transistor |
| Download | BU426AF Download (PDF) |
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switch-mode CTV supply systems applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage VBE= 0 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 2 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 70 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.1 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU426AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BU426AF | SILICON POWER TRANSISTOR | SavantIC |
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BU426A | NPN SILICON POWER TRANSISTORS | Siemens Semiconductor Group |
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BU426A | NPN Transistor | STMicroelectronics |
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BU426A | NPN SILICON POWER TRANSISTORS | Bourns Electronic Solutions |
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BU426 | NPN Transistor | ST Microelectronics |
| Part Number | Description |
|---|---|
| BU426A | NPN Transistor |
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| BU407F | NPN Transistor |