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BU4525DW - NPN Transistor

Description

With TO-247 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor

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isc Silicon NPN Power Transistor DESCRIPTION ·With TO-247 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 14 A ICM Peak Collector Current 30 A IC Base Current 8 A PC Collector Power Dissipation@TC=75℃ 125 W TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER R
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