Datasheet Details
| Part number | BU4525DW |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.33 KB |
| Description | NPN Transistor |
| Download | BU4525DW Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BU4525DW |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.33 KB |
| Description | NPN Transistor |
| Download | BU4525DW Download (PDF) |
|
|
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·With TO-247 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 14 A ICM Peak Collector Current 30 A IC Base Current 8 A PC Collector Power Dissipation@TC=75℃ 125 W TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.0 ℃/W BU4525DW isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU4525DW | Silicon Diffused Power Transistor | NXP |
|
BU4525DF | Silicon Diffused Power Transistor | NXP |
|
BU4525DL | Silicon Diffused Power Transistor | NXP |
|
BU4525DX | Silicon Diffused Power Transistor | NXP |
|
BU4525AF | Silicon Diffused Power Transistor | NXP |
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