| Part number | BU4525DW |
|---|---|
| Datasheet | BU4525DW-INCHANGE.pdf |
| File Size | 207.33 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BU4525DW | Silicon Diffused Power Transistor | NXP |
|
BU4525DF | Silicon Diffused Power Transistor | NXP |
|
BU4525DL | Silicon Diffused Power Transistor | NXP |
|
BU4525DX | Silicon Diffused Power Transistor | NXP |
|
BU4525AF | Silicon Diffused Power Transistor | NXP |
See all Inchange Semiconductor datasheets
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| BU406D | NPN Transistor |
| BU406F | NPN Transistor |
| BU406FI | NPN Transistor |
| BU406H | NPN Transistor |
| BU407 | NPN Transistor |
| BU407D | NPN Transistor |
| BU407F | NPN Transistor |
