BU536
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 480V(Min.) High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: BU536
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 201.23 KB
Datasheets by Manufacturer
- BU536 — Telefunken Microelectronics — Silicon NPN Power Transistor