BU546
Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min.) High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: BU546
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 202.11 KB
Datasheets by Manufacturer
- BU546 — SavantIC — SILICON POWER TRANSISTOR