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BU603 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 550V(Min) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power supplies and deflection circuits for color receivers and monitors ABSOLUT

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 550V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power supplies and deflection circuits for color receivers and monitors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage-VBE= 0 1350 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 2 A IBM Base Current-Peak 4 A IE Emitter Current-Continuous 7 A IEM Emitter Current-Peak PC Collector Power Dissipation TC=25℃ Tj Junction Temperature 12 A 100 W 150