Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 550V(Min)
High Switching Speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in power supplies and deflection circuits
for color receivers and monitors
ABSOLUT
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 550V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power supplies and deflection circuits
for color receivers and monitors
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage-VBE= 0
1350
V
VCEO Collector-Emitter Voltage
550
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
2
A
IBM
Base Current-Peak
4
A
IE
Emitter Current-Continuous
7
A
IEM
Emitter Current-Peak
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
12
A
100
W
150