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BU606D Datasheet Preview

BU606D Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Fast Switching Speed-
: tf= 0.75μs(Max)
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in horizontal deflection output stages
of TV’s and CRT’s
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEV
Collector-Emitter Voltage
400
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICP
Collector Current-Peak Repetitive
10
A
ICP
Collector Current- Peak (10ms)
15
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
4
A
90
W
150
Tstg
Storage Temperature Range
-65~150
BU606D
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BU606D Datasheet Preview

BU606D Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BU606D
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0
200
V
VEBO
Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
6.0
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.65A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 5A; IB= 0.65A
VCE= 400V; VBE= 0
VCE=250V; VBE= 0
VCE=250V; VBE= 0;TC= 150
VEB= 6V; IC= 0
1.2
V
5.0
0.1 mA
1.0
400 mA
fT
Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V, ftest= 20MHz
10
MHz
COB
Output Capacitance
tf
Fall Time
IE= 0; VCB= 10V; ftest= 1.0MHz
IC= 5A; IB1= -IB2= 0.5A, L= 150μH
VCC= 40V
80
pF
0.75 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BU606D
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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