BU626A - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min.) Low Collector-Emitter Saturation Voltage- : VCE(sat) = 3.3V(Max.) @ IC= 8A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power supply units of TV rec

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BU626A npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BU626A
Manufacturer	Inchange Semiconductor
File Size	202.03 KB
Description	NPN Transistor
Datasheet	BU626A Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min.) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 3.3V(Max.) @ IC= 8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power supply units of TV receivers.