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BU806FI - NPN Transistor

General Description

High voltage High switching speed Low saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This Darlington transistor is a high voltage ,high speed device for use in horizontal deflecti

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isc Silicon NPN Darlington Power Transistor BU806FI DESCRIPTION ·High voltage ·High switching speed ·Low saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This Darlington transistor is a high voltage ,high speed device for use in horizontal deflection circuits in TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 400 V VCEV Collector- Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 15 A 30 W 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL C