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BU911 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenoid/ relay drivers Motor control Electronic automotive ignition ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARA

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isc Silicon NPN Power Transistor BU911 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solenoid/ relay drivers ·Motor control ·Electronic automotive ignition ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 6 A ICM Collector Current-peak 10 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.