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BU921P - NPN Transistor

Description

High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

circuits for motor control.

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 10 A ICM Collector Current-peak 15 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 105 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.2 ℃/W BU921P isc website：www.
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