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BU921P Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor.

General Description

·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 10 A ICM Collector Current-peak 15 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 105 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.2 ℃/W BU921P isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BU921P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;