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BU941ZL Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor.

General Description

·Built In Clamping Zener ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electric ignitions ABSOLUTE MAXIMUM RATINGS (T =25 aB B ℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 350 V VBEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 1 A IBM Base Current-Peak PC Collector Power Dissipation @ TBCB=25℃ T JB B Junction Temperature 5 A 155 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT RBth j-cB Thermal Resistance, Junction to Case 0.97 ℃/W BU941ZL isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS T CB B =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage ICB= 10mA VCE(sat)-1 Collector-Emitter Saturation Voltage ICB= 8A;

IBB= 0.1A VCE(sat)-2 Collector-Emitter Saturation Voltage ICB= 10A;

IB= 0.25A VCE(sat)-3 Collector-Emitter Saturation Voltage ICB= 12A;

BU941ZL Distributor