Datasheet Details
| Part number | BUF410I |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.15 KB |
| Description | NPN Transistor |
| Download | BUF410I Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUF410I |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.15 KB |
| Description | NPN Transistor |
| Download | BUF410I Download (PDF) |
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-frequency power supplies and motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 3 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4.5 A 85 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 3.2 ℃/W BUF410I isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUF410I ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUF410 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | ST Microelectronics |
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BUF410A | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | ST Microelectronics |
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