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BUF742 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter Breakdown Voltage
: V(BR)CEO = 400V(Min.)
·Collector Saturation Voltage
: VCE(sat) = 0.2V(Max) @ IC= 0.8A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for electronic lamp ballast circuits switch-mode
power supplies applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
900
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
11
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-peak
7.5
A
IB
Base Current-Continuous
2.5
A
IBM
Base Current-peak
PC
Collector Power Dissipation
TC=25
Ti
Junction Temperature
4
A
50
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.5 /W
BUF742
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BUF742 Datasheet Preview

BUF742 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BUF742
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 0.8A; IB= 0.2A
VBE(sat)-2 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
hFE-1
DC Current Gain
IC= 2.5A; IB= 0.8A
VCES= 900V; VEB=0
VCES= 900V; VEB=0,TC= 150
IC= 10mA; VCE= 2V
hFE-2
DC Current Gain
IC= 0.8A; VCE= 2V
hFE-3
DC Current Gain
IC= 2.5A; VCE= 2V
hFE-4
DC Current Gain
IC= 5A; VCE= 2V
fT
Current-Gain—Bandwidth Product
Switching Times
ton
Turn on Time
IC= 0.2A; VCE= 10V; f= 1MHz
ts
Storage Time
tf
Fall Time
IC= 0.8A;IB1=0.2A; IB2= 0.4A;
MIN TYP. MAX UNIT
400
V
11
V
0.2
V
0.4
V
1.0
V
1.2
V
10
200
μA
15
15
7
4
4
MHz
0.2 μs
2.0 μs
0.3 μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BUF742
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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