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BUK436-200B Datasheet N-Channel MOSFET

Manufacturer: Inchange Semiconductor

Download the BUK436-200B datasheet PDF. This datasheet also includes the BUK436-200A variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (BUK436-200A-INCHANGE.pdf) that lists specifications for multiple related part numbers.

General Description

·Drain Source Voltage- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage Drain BUK436-200A ID Current-continuou s@ TC=25℃ BUK436-200B Ptot Total Dissipation@TC=25℃ ±30 V 19 A 17 125 W Tj Max.

Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55-150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 45 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor BUK436-200A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0;

ID= 10mA 200 V VGS(th) Gate Threshold Voltage VDS=VGS;

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK436-200A/B.

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