Datasheet4U Logo Datasheet4U.com

BUK436-60B Datasheet N-Channel MOSFET

Manufacturer: Inchange Semiconductor

Download the BUK436-60B datasheet PDF. This datasheet also includes the BUK436-60A variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BUK436-60A-INCHANGE.pdf) that lists specifications for multiple related part numbers.

General Description

·Drain Source Voltage- : VDSS=60V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage Drain BUK436-60A ID Current-continuou s@ TC=25℃ BUK436-60B Ptot Total Dissipation@TC=25℃ ±30 V 50 A 46 125 W Tj Max.

Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55-150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 45 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor BUK436-60A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0;

ID= 0.25mA VGS(th) RDS(on) Gate Threshold Voltage VDS=VGS;

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK436-60A/B.

More Datasheets from Inchange Semiconductor

Part Number Description
BUK436-60A N-Channel MOSFET
BUK436-100A N-Channel MOSFET
BUK436-100B N-Channel MOSFET
BUK436-200A N-Channel MOSFET
BUK436-200B N-Channel MOSFET
BUK436-800A N-Channel MOSFET
BUK436-800B N-Channel MOSFET
BUK437-500B N-Channel MOSFET
BUK438-500A N-Channel MOSFET
BUK438-500B N-Channel MOSFET